a p20gt60asi-h f advanced power n-channel insulated gate electronics corp. bipolar transistor features v ces high speed switching i c low saturation voltage v ce(sat),typ. =1.7v@i c =12a rohs compliant product absolute maximum ratin gs notes: 1.pulse width limited by max. junction temperature . thermal data symbol rthj-c rthj-c(diode) rthj-a electrical characteristics@t j =25 o c(unless otherwise specified) symbol min. typ. max. units i ges --+ 100 na i ces --1ma v ce(sat) - 1.7 2.2 v v ce(sat) - 1.9 - v v ge(th) 2-6v q g - 95 150 nc q ge -16- nc q gc -35- nc t d(on) -40- ns t r -20- ns t d(off) - 140 - ns t f - 200 400 ns e on - 0.1 - mj e off -1- mj c ies - 2760 4400 pf c oes -65- pf c res -40- pf v f - 1.8 2.4 v t rr -30- ns q rr -30- nc data and specifications subject to change without notice v ce =30v v ge =15v, i c =25a o c/w w value thermal resistance junction-case 5 o c/w 25 50 + 20 v a a a reverse transfer capacitance rise time fall time turn-off delay time input capacitance turn-off switching loss turn-on switching loss symbol v ces 600v 12a rating collector-emitter voltage units parameter v 600 rohs-compliant product o c/w parameter 33 -55 to 150 150 storage temperature range t j operating junction temperature range v ge i c @t c =25 o c collector current gate-emitter voltage a v ce =600v, v ge =0v v ge =15v thermal resistance junction-ambient v ce =v ge , i c =250ua v ge =15v, i c =12a v ge =+ 20v, v ce =0v parameter test conditions thermal resistance junction-case collector current 12 p d @t c =25 o c maximum power dissipation i cm i f @t c =100 o c diode forward current 8 i c @t c =100 o c 201109211 o c v cc =480v pulsed collector current 1 1 output capacitance f=1.0mhz o c 65 i c =20a frd forward voltage i f =8a frd reverse recovery time i f =8a a gate-collector charge v ge =0v v ce =480v, i c =20a, v ge =15v, r g =5 ? , inductive load turn-on delay time units 3.8 gate-to-emitter leakage current t stg total gate charge frd reverse recovery charge di/dt = 100 a/ s i fm diode pulse forward current 40 gate-emitter charge collector-emitter saturation voltage collector-emitter leakage current gate threshold voltage collector-emitter saturation voltage g c e to-220cfm(i) g c e
ap20gt60asi-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. typical saturation voltage fig 4. typical collector- emitter voltage characteristics v.s. junction temperature -- fig 5. forward characteristic of fi g 6. t y pical capacitance characterisitics diode 2 0 20 40 60 80 100 120 02468 v ce , collector-emitter voltage (v) i c , collector current (a) 20v 18v 15v 12v v ge =10v t c =25 o c 1 1 2 2 3 3 0 40 80 120 160 junction temperature ( o c) v ce(sat) , saturation voltage(v) i c =40a i c =30a v ge =15v 0 20 40 60 80 100 120 0123456 v ce , collector-emitter voltage (v) i c , collector current(a) v ge =15v t c =25 o c 0 1000 2000 3000 4000 5000 1 5 9 13172125293337 v ce , collector-emitter voltage (v) capacitance (pf) f =1.0mh z c ies c oes c res t c =150 o c 0 20 40 60 80 100 120 0246810 v ce , collector-emitter voltage (v) i c , collector current (a) 20v 18v 15v 12v v ge =10v t c =150 o c 0 2 4 6 8 0 0.4 0.8 1.2 1.6 2 2.4 v f , forward voltage (v) i f , forward current (a) t j =25 o c t j =150 o c
a p20gt60asi-h f fig7. power dissipation vs. junction fig 8. effective transient thermal temperature impedance fig 9. saturation voltage vs. v ge fig 10. saturation voltage vs. v ge fig 11. gate charge characterisitics fig 12. soa characteristics 3 0 5 10 15 20 0 4 8 121620 v ge , gate-emitter voltage(v) v ce , collector-emitter voltage(v) i c =60a 40 a 20 a t c =25 o c 0 5 10 15 20 0 4 8 12 16 20 v ge , gate-emitter voltage(v) v ce , collector-emitter voltage(v) i c =60a 40 a 20 a t c = 150 o c 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 10 20 30 40 0 25 50 75 100 125 150 junction temperature ( o c ) power dissipation (w) 0 4 8 12 16 0 20 40 60 80 100 120 q g , gate charge (nc) v ge , gate -emitter voltage (v) i c =20a v cc =480v 0.01 0.1 1 10 100 1000 1 10 100 1000 10000 v ce ,collector - emitter voltage(v) i c ,collctor current(a) t c =25 o c single pulse 10us 100us 1ms 10ms
|
